JPS525233B2 - - Google Patents

Info

Publication number
JPS525233B2
JPS525233B2 JP47020973A JP2097372A JPS525233B2 JP S525233 B2 JPS525233 B2 JP S525233B2 JP 47020973 A JP47020973 A JP 47020973A JP 2097372 A JP2097372 A JP 2097372A JP S525233 B2 JPS525233 B2 JP S525233B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47020973A
Other languages
Japanese (ja)
Other versions
JPS4890480A (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47020973A priority Critical patent/JPS525233B2/ja
Priority to US00336366A priority patent/US3825945A/en
Publication of JPS4890480A publication Critical patent/JPS4890480A/ja
Publication of JPS525233B2 publication Critical patent/JPS525233B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP47020973A 1972-02-29 1972-02-29 Expired JPS525233B2 (en])

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47020973A JPS525233B2 (en]) 1972-02-29 1972-02-29
US00336366A US3825945A (en) 1972-02-29 1973-02-27 Field effect semiconductor memory apparatus with a floating gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47020973A JPS525233B2 (en]) 1972-02-29 1972-02-29

Publications (2)

Publication Number Publication Date
JPS4890480A JPS4890480A (en]) 1973-11-26
JPS525233B2 true JPS525233B2 (en]) 1977-02-10

Family

ID=12042098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47020973A Expired JPS525233B2 (en]) 1972-02-29 1972-02-29

Country Status (2)

Country Link
US (1) US3825945A (en])
JP (1) JPS525233B2 (en])

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
JPS56950B2 (en]) * 1972-11-08 1981-01-10
JPS5513144B2 (en]) * 1972-11-20 1980-04-07
JPS5513143B2 (en]) * 1972-11-20 1980-04-07
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
JPS5513433B2 (en]) * 1974-08-29 1980-04-09
DE2525062C2 (de) 1975-06-05 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Matrixanordnung aus n-Kanal-Speicher-FET
DE2513207C2 (de) * 1974-09-20 1982-07-01 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2638730C2 (de) * 1974-09-20 1982-10-28 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
DE2445030C2 (de) * 1974-09-20 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines integrierten MOS-Feldeffekttransistors mit einem elektrisch isolierten schwebenden Gate und einem Steuergate und Verwendung des Verfahrens zur Herstellung eines programmierbaren Festwertspeichers
DE2505824C3 (de) * 1975-02-12 1982-04-15 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
DE2560220C2 (de) * 1975-03-25 1982-11-25 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US4115914A (en) * 1976-03-26 1978-09-26 Hughes Aircraft Company Electrically erasable non-volatile semiconductor memory
US4222062A (en) * 1976-05-04 1980-09-09 American Microsystems, Inc. VMOS Floating gate memory device
US4119995A (en) * 1976-08-23 1978-10-10 Intel Corporation Electrically programmable and electrically erasable MOS memory cell
JPS6037619B2 (ja) * 1976-11-17 1985-08-27 株式会社東芝 半導体メモリ装置
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
DE2706155A1 (de) * 1977-02-14 1978-08-17 Siemens Ag In integrierter technik hergestellter elektronischer speicher
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4282540A (en) * 1977-12-23 1981-08-04 International Business Machines Corporation FET Containing stacked gates
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
JPS6120784Y2 (en]) * 1978-03-07 1986-06-21
JPS6046554B2 (ja) * 1978-12-14 1985-10-16 株式会社東芝 半導体記憶素子及び記憶回路
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Ｍｏｓ半導体集積回路
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
JPS5636166A (en) * 1979-08-31 1981-04-09 Toshiba Corp Nonvolatile semiconductor memory
DE3175125D1 (en) * 1980-11-20 1986-09-18 Toshiba Kk Semiconductor memory device and method for manufacturing the same
US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
US3774036A (en) * 1972-02-23 1973-11-20 Searle & Co Generation of a supply of radionuclide
GB1354071A (en) * 1972-12-05 1974-06-05 Plessey Co Ltd Memory elements

Also Published As

Publication number Publication date
JPS4890480A (en]) 1973-11-26
US3825945A (en) 1974-07-23

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